Influence of Electric Field Coupling Model on the Simulated Performances of a GaN Based Planar Nanodevice
Figure 5
Normalized electron density fluctuations with time (a) in the channel and (b) near the channel (i.e., in the monitored area shown in Figure 1(a)) at bias of 26 V obtained by the 2D model (red curves) and the 2D-3D model (green curves). Other simulation parameters are the same as those used for obtaining blue curves in Figure 4.
