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Journal of Nanomaterials
Volume 2013, Article ID 131537, 6 pages
http://dx.doi.org/10.1155/2013/131537
Research Article

Thermoelectric Properties of Al-Doped Mesoporous ZnO Thin Films

1Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea
2Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Republic of Korea
3Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261, USA

Received 7 June 2013; Accepted 25 August 2013

Academic Editor: Chan Park

Copyright © 2013 Min-Hee Hong et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Al-doped mesoporous ZnO thin films were synthesized by a sol-gel process and an evaporation-induced self-assembly process. In this work, the effects of Al doping concentration on the electrical conductivity and characterization of mesoporous ZnO thin films were investigated. By changing the Al doping concentration, ZnO grain growth is inhibited, and the mesoporous structure of ZnO is maintained during a relatively high temperature annealing process. The porosity of Al-doped mesoporous ZnO thin films increased slightly with increasing Al doping concentration. Finally, as electrical conductivity was increased as electrons were freed and pore structure was maintained by inhibiting grain growth, the thermoelectric property was enhanced with increasing Al concentration.