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Journal of Nanomaterials
Volume 2013, Article ID 181979, 6 pages
Research Article

Electronic Structure and Energy Band of IIIA Doped Group ZnO Nanosheets

School of Physics, University of Jinan, Jinan 250022, China

Received 7 March 2013; Revised 8 May 2013; Accepted 26 May 2013

Academic Editor: Huiwen Xu

Copyright © 2013 Xian-Yang Feng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The electronic and magnetic properties of IIIA group doped ZnO nanosheets (ZnONSs) are investigated by the first principles. The results show that the band gap of ZnO nanosheets increases gradually along with Al, Ga, and In ions occupying Zn sites and O sites. The configuration of Al atoms replacing Zn atoms is more stable than other doped. The system shows half-metallic characteristics for In-doped ZnO nanosheets.