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Journal of Nanomaterials
Volume 2013 (2013), Article ID 195325, 17 pages
http://dx.doi.org/10.1155/2013/195325
Review Article

Technical Solutions to Mitigate Reliability Challenges due to Technology Scaling of Charge Storage NVM

Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor, Malaysia

Received 30 April 2013; Accepted 11 July 2013

Academic Editor: Ugur Serincan

Copyright © 2013 Meng Chuan Lee and Hin Yong Wong. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [3 citations]

The following is the list of published articles that have cited the current article.

  • Meng Chuan Lee, Hin Yong Wong, and Lini Lee, “Investigation on the effect of tunnel oxide nitridation to threshold voltage instability mechanisms of nanoscale CT NVM,” Solid-State Electronics, 2014. View at Publisher · View at Google Scholar
  • Meng Chuan Lee, and Hin Yong Wong, “Investigation on the origin of the anomalous tail bits on nitrided charge trap flash memory,” Microelectronics Reliability, vol. 55, no. 2, pp. 337–341, 2015. View at Publisher · View at Google Scholar
  • Meng Chuan Lee, and Hin Yong Wong, “Investigation on X-ray irradiation on nanoscale nitride based charge trapping flash memory devices,” Microelectronics Reliability, vol. 79, pp. 59–68, 2017. View at Publisher · View at Google Scholar