Technical Solutions to Mitigate Reliability Challenges due to Technology Scaling of Charge Storage NVM

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="195325.fig.004a" src="https://static.hindawi.com/articles/jnm/volume-2013/195325/figures/195325.fig.004a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b> near-planar </td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="195325.fig.004b" src="https://static.hindawi.com/articles/jnm/volume-2013/195325/figures/195325.fig.004b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b>FinFET</td></tr></table></td></tr></table>

<table>TEM cross section of (a) near-planar, and (b) FinFET structure of sub-40 nm BE-SONOS NVM devices [<a href="/journals/jnm/2013/195325/#B54">19</a>].</table>

Journal of Nanomaterials

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Figure 4: Technical Solutions to Mitigate Reliability Challenges due to Technology Scaling of Charge Storage NVM 