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| Categories of mitigation techniques | Mitigation techniques | Purposes | References |
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Tunnel barrier engineering | Tunnel oxide top/bottom nitridation | To enhance endurance and retention performance of tunnel oxide of flash memory | [67–82] |
| VARIable Oxide Thickness (VARIOT) | To implement multilayer dielectric stacks with combination of high-k and low-k dielectrics to enhance either endurance speed or retention performance | [60–63] |
| Implementation of high-k dielectrics | To replace interpoly ONO dielectric stack of standard FG flash memory or tunnel oxide of CTF with high-k dielectrics to enhance reliability performance, for example, HfO2, Al2O3, and HfAlO | [64, 65] |
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Novel flash cell structure | Hemi-Cylindrical FET (HCFET) | To reduce severe short channel effect of small dimension beyond sub-40 nm as compared to planar standard FG flash | [4, 15] |
| FinFET | Offer better scalability and better short channel effect as compared to planar structure of standard FG flash | [16–19] |
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Emerging NVM technologies | Phase change memory (PCM) | Utilizes electrical properties of chalcogenide based material to store data. Offers better scalability than standard FG flash with program/erase and retention performance rivals standard FG flash | [21–37] |
| Magnetoresistive random access memory (MRAM) | Utilizes the resistance change of Magnetic Tunnel Junction (MTJ) to store data which is determined by the magnetic directions of two electrodes made of ferromagnetic material. | [6] |
| Nanocrystal | Utilizes mutually isolated quantum dots as charge storage node in control oxide layer to replace conductive FG for further dimension scaling | [38–59, 81, 82] |
| Resistive RAM (RRAM) | Relies on the ability to switch to different resistance states by applying sufficient voltage across the structures. RRAM consists of simple oxide or complex oxide or transition metal oxide structures | [6, 66, 110] |
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