Technical Solutions to Mitigate Reliability Challenges due to Technology Scaling of Charge Storage NVM

Table 4

Key advantages of PCM.

	Key attributes of PCM	References
1	Scalable to sub-20 nm; new study shows no significant intrinsic retention issue for PCM at 10 nm	[31, 37]
2	Low random access read latency at ~50 ns, fast write performance at ~100 ns, good data retention >10 years, low write and read operating voltage, direct write technology that requires no erase prior to write operation, and good endurance performance at 10^9 cycles	[21, 28–30]
3	As compared to charge storage NVM, chalcogenide based NVM is immune to charge based radiation effects	[35, 36]
4	Multilevel cell operation capability	[34]