Table 4: Key advantages of PCM.

Key attributes of PCM References

1Scalable to sub-20 nm; new study shows no significant intrinsic retention issue for PCM at 10 nm[31, 37]
2Low random access read latency at ~50 ns, fast write performance at ~100 ns, good data retention >10 years, low write and read operating voltage, direct write technology that requires no erase prior to write operation, and good endurance performance at 109 cycles[21, 2830]
3As compared to charge storage NVM, chalcogenide based NVM is immune to charge based radiation effects[35, 36]
4Multilevel cell operation capability[34]