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Journal of Nanomaterials
Volume 2013, Article ID 201017, 6 pages
Research Article

Annealing Effect on the Thermoelectric Properties of Bi2Te3 Thin Films Prepared by Thermal Evaporation Method

Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 804, Taiwan

Received 21 September 2013; Accepted 27 October 2013

Academic Editor: Liang-Wen Ji

Copyright © 2013 Jyun-Min Lin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3 thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3 thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.