Table of Contents Author Guidelines Submit a Manuscript
Journal of Nanomaterials
Volume 2013, Article ID 215613, 6 pages
Review Article

Materials for Future Quantum Dot-Based Memories

1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
2Electric and Computer Engineering Department, King Abdul-Aziz University, Jeddah 21589, Saudi Arabia

Received 30 April 2013; Accepted 5 June 2013

Academic Editor: Yang Chai

Copyright © 2013 T. Nowozin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The present paper investigates the current status of the storage times in self-organized QDs, surveying a variety of heterostructures advantageous for strong electron and/or hole confinement. Experimental data for the electronic properties, such as localization energies and capture cross-sections, are listed. Based on the theory of thermal emission of carriers from QDs, we extrapolate the values for materials that would increase the storage time at room temperature to more than millions of years. For electron storage, GaSb/AlSb, GaN/AlN, and InAs/AlSb are proposed. For hole storage, GaSb/Al0.9Ga0.1As, GaSb/GaP, and GaSb/AlP are promising candidates.