Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate

<table>Rate of specific energy absorption for pure Si wafer and VACNT-Si (processed at 820°C).</table>

Journal of Nanomaterials

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Figure 6

Figure 6: Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate 

Figure 6 | Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate 