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Journal of Nanomaterials
Volume 2013 (2013), Article ID 316897, 5 pages
Research Article

A Tunable 3-Terminal GMR Device Based on a Hybrid Magnetic-Electric-Barrier Nanostructure

Department of Electron Engineering, Hunan University of Science and Engineering, Yongzhou, Hunan 425100, China

Received 27 July 2012; Accepted 12 October 2012

Academic Editor: Mao-Wang Lu

Copyright © 2013 Y. H. Kong et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We propose a giant magnetoresistance (GMR) device, which can be experimentally realized by depositing two ferromagnetic (FM) strips and a Schottky metal (SM) stripe in parallel configuration on top of the GaAs heterostructure. The GMR effect ascribes a significant electron transmission difference between the parallel and antiparallel magnetization configurations of two FM stripes. Moreover, the MR ratio depends strongly on the magnetic strength of the magnetic barrier (MB) and the electric barrier (EB) height induced by an applied voltage to the SM stripe. Thus, this system can be used as a GMR device with tunable MR by an applied voltage to SM stripe or by magnetic strength of the MB.