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Journal of Nanomaterials
Volume 2013 (2013), Article ID 354035, 4 pages
Research Article

P3HT:PCBM Incorporated with Silicon Nanoparticles as Photoactive Layer in Efficient Organic Photovoltaic Devices

1Department of Electrical Engineering, Kun Shan University, Da-Wan Road, Tainan City 71003, Taiwan
2National Nano Device Laboratories, Tainan City 74147, Taiwan

Received 17 October 2013; Revised 28 November 2013; Accepted 1 December 2013

Academic Editor: Sheng-Po Chang

Copyright © 2013 Shang-Chou Chang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Silicon nanoparticles doped poly(3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester blends (P3HT:PCBM: Si NP) have been produced as the photoactive layer of organic photovoltaic devices (OPVs). The silicon nanoparticles’ size is between 80 and 100 nm checked by transmission electron microscope (TEM). The 0.35 wt% Si NP doping OPVs exhibit higher power conversion efficiency (PCE) than other OPVs. The PCE of the OPVs increases from 3.01% to 3.38% mainly due to increasing short-circuit current density from 8.38 to 9.48 mA/cm2, while the open-circuit voltage remains the same. The Si NP can provide extra exciton separation and electron pathways in hybrid solar cells.