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Journal of Nanomaterials
Volume 2013, Article ID 542737, 9 pages
http://dx.doi.org/10.1155/2013/542737
Research Article

Fabrication of Silicon Nitride Ion Sensitive Field-Effect Transistor for pH Measurement and DNA Immobilization/Hybridization

Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), 01000 Kangar Perlis, Malaysia

Received 10 July 2013; Accepted 10 September 2013

Academic Editor: Hongchen Chen Gu

Copyright © 2013 U. Hashim et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

U. Hashim, Soon Weng Chong, and Wei-Wen Liu, “Fabrication of Silicon Nitride Ion Sensitive Field-Effect Transistor for pH Measurement and DNA Immobilization/Hybridization,” Journal of Nanomaterials, vol. 2013, Article ID 542737, 9 pages, 2013. https://doi.org/10.1155/2013/542737.