Journal of Nanomaterials / 2013 / Article / Fig 3

Research Article

An Analytic Model for Estimating the Length of the Velocity Saturated Region in Double Gate Bilayer Graphene Transistors

Figure 3

Lateral electric field along the drain side channel length for different values of: (a) oxide thicknesses with nm, and and (b) drain-source voltages with nm, nm and .
560252.fig.003a
(a)
560252.fig.003b
(b)

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