Journal of Nanomaterials / 2013 / Article / Fig 4

Research Article

An Analytic Model for Estimating the Length of the Velocity Saturated Region in Double Gate Bilayer Graphene Transistors

Figure 4

Length of velocity saturation region versus drain-source voltage and channel length for different values of: (a) oxide thicknesses with nm and , (b) doping concentrations with nm, and nm, and (c) drain-source voltages with nm and .
560252.fig.004a
(a)
560252.fig.004b
(b)
560252.fig.004c
(c)

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