Journal of Nanomaterials / 2013 / Article / Fig 4

Research Article

An Analytic Model for Estimating the Length of the Velocity Saturated Region in Double Gate Bilayer Graphene Transistors

Figure 4

Length of velocity saturation region versus drain-source voltage and channel length for different values of: (a) oxide thicknesses with nm and , (b) doping concentrations with nm, and nm, and (c) drain-source voltages with nm and .

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.