Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode

<table>Binding energy of the Zn 2<i>p </i><sub>3/2</sub> core level for the (a) untreated and (b) (NH<sub>4</sub>)<sub>2</sub>S<sub><i>x</i></sub>-treated ZnO layer surfaces.</table>

Journal of Nanomaterials

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Figure 9

Figure 9: Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode 