Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode

Table 2

Parameters of the Schottky diodes with and without an additive preetching process prior to the surface treatment using the dilute H₂O₂ solution.

Samples	Current ratio (@ ±2 V)	Φ𝐵,𝐼-𝑉 (eV)	𝑛
Nonetched	1035	0.68	1.45
Etched for 20 sec	6923	0.83	1.24
Etched for 40 sec	3.3 × 10^7	0.90	1.20