Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode

Table 3

Parameters of the Schottky diodes with and without the surface treatments calculated from the 𝐼-𝑉 and 𝐶-𝑉 characteristics.

Samples	Current ratio (@ ±2 V)	Φ𝐵,𝐼-𝑉 (eV)	𝑛	Φ𝐵,𝐶-𝑉 (eV)	𝑁𝑑 (/cm^3)
Untreated	1.15	0.59	2.01	0.66	−6.9 × 10^15
H2O2-treated	3.3 × 10^7	0.90	1.20	0.97	−1.5 × 10^15
(NH4)2S𝑥-treated	3.1 × 10^7	0.87	1.30	0.92	−2.2 × 10^15