Figure 9: Schematic for fabrication process of a SWCNT-TFT by ink-jet printing [53]. The whole device was fabricated by printing. First, a layer of silver ink was printed on the substrate to form source and train electrode. The silver layer was sintered at a temperature of 180°C to obtain low resistance. Then SWCNT solution was used as ink to print the channel. After that, another layer of silver ink was printed to improve the contact between SWCNT and silver electrode. Finally, the gate dielectric and gate electrode were fabricated.