Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

Table 1

Benchmarking for properties of SWCNT-TFTs reported by different groups.

No.	𝐿ch (µm)	𝐼on/𝑊 (μA/μm)	μ  (cm^2/V⋅s)	𝐼on/𝐼off	𝑔𝑚/𝑊 (µS/µm)	Reference
1	10	15	50	3 × 10^3	4	[12]
2	4	10	52	>1 × 10^4	0.033	[54]
3	100	0.01	35	6 × 10^6	—	[55]
4	50	0.356	67	482	0.046	[56]
5*	20	—	140	1 × 10^7	—	[11]
6^#	0.12	125	—	—	40	[57]
7^#	1	0.8	3500	>1 × 10^3	~0.096	[58]
8^#	50	0.6	1300	3 × 10^4	—	[59]

*Note: sample No. 5 is metallic SWCNT/IZO-TFT sample, while others are semiconducting SWCNT-TFTs; ^#Note: sample Nos. 6, 7, and 8 are aligned CNT channels, while others are random CNT network films.