Anomalous Threshold Voltage Variability of Nitride Based Charge Storage Nonvolatile Memory Devices

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<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
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</svg> based on gate voltage applied on NVM cell that produces 10 <i>μ</i>A sensing current. </table>

Journal of Nanomaterials

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Figure 4

Figure 4: Anomalous Threshold Voltage Variability of Nitride Based Charge Storage Nonvolatile Memory Devices 