SiO₂ Nanopillars on Microscale Roughened Surface of GaN-Based Light-Emitting Diodes by SILAR-Based Method

Figure 2

Schematic diagram of GaN-based LEDs with different heights of SiO₂ nanopillars: (a) without SO₂ nanopillars; (b) 200 nm; (c) 400 nm; and (d) 600 nm.

(a)

(b)

(c)

(d)