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Journal of Nanomaterials
Volume 2013, Article ID 832170, 6 pages
Research Article

Light Output Enhancement of InGaN/GaN Light-Emitting Diodes with Contrasting Indium Tin-Oxide Nanopatterned Structures

1Nano Process Division, Korea Advanced Nano Fab. Center, Suwon, Kyeonggi 443-270, Republic of Korea
2Department of Electrical and Computer Engineering, Ajou University, Suwon, Kyeonggi 443-749, Republic of Korea

Received 12 April 2013; Revised 9 July 2013; Accepted 9 July 2013

Academic Editor: M. Reza Bayati

Copyright © 2013 Sang Hyun Jung et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square and hexagonal lattices are fabricated on the ITO layer by an electron beam lithography and inductively coupled plasma dry etching processes. The circular hole pattern with a hexagonal geometry is found to be the most effective among the studied structures. Light output intensity measurements reveal that the circular hole nanopatterned ITO LEDs with a hexagonal lattice show up to 35.6% enhancement of output intensity compared to the sample without nanopatterns.