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Journal of Nanomaterials
Volume 2013, Article ID 832170, 6 pages
Research Article

Light Output Enhancement of InGaN/GaN Light-Emitting Diodes with Contrasting Indium Tin-Oxide Nanopatterned Structures

1Nano Process Division, Korea Advanced Nano Fab. Center, Suwon, Kyeonggi 443-270, Republic of Korea
2Department of Electrical and Computer Engineering, Ajou University, Suwon, Kyeonggi 443-749, Republic of Korea

Received 12 April 2013; Revised 9 July 2013; Accepted 9 July 2013

Academic Editor: M. Reza Bayati

Copyright © 2013 Sang Hyun Jung et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [3 citations]

The following is the list of published articles that have cited the current article.

  • Yung-Sheng Chen, Che-Hao Liao, Chie-Tong Kuo, Raymond Chien-Chao Tsiang, and Hsiang-Chen Wang, “Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD,” Nanoscale Research Letters, vol. 9, no. 1, 2014. View at Publisher · View at Google Scholar
  • Zhanxu Chen, Wenjie Liu, Wei Wan, Gengyan Chen, Yongzhu Chen, Baijun Zhang, and Chongjun Jin, “Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode,” Journal of Nanomaterials, vol. 2016, pp. 1–7, 2016. View at Publisher · View at Google Scholar
  • Jie Zhao, Xinghuo Ding, Jiahao Miao, Jinfeng Hu, Hui Wan, and Shengjun Zhou, “Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing,” Nanomaterials, vol. 9, no. 2, pp. 203, 2019. View at Publisher · View at Google Scholar