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Journal of Nanomaterials
Volume 2014, Article ID 219719, 7 pages
Research Article

Unified Drain Current Model of Armchair Graphene Nanoribbons with Uniaxial Strain and Quantum Effect

1Department of Electrical & Electronic, Southern University College, 81300 Skudai, Johor, Malaysia
2Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81300 Skudai, Johor, Malaysia

Received 8 January 2014; Revised 31 March 2014; Accepted 31 March 2014; Published 23 April 2014

Academic Editor: Yingkui Yang

Copyright © 2014 EngSiew Kang and Razali Ismail. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A unified current-voltage I-V model of uniaxial strained armchair graphene nanoribbons (AGNRs) incorporating quantum confinement effects is presented in this paper. The I-V model is enhanced by integrating both linear and saturation regions into a unified and precise model of AGNRs. The derivation originates from energy dispersion throughout the entire Brillouin zone of uniaxial strained AGNRs based on the tight-binding approximation. Our results reveal the modification of the energy band gap, carrier density, and drain current upon strain. The effects of quantum confinement were investigated in terms of the quantum capacitance calculated from the broadening density of states. The results show that quantum effect is greatly dependent on the magnitude of applied strain, gate voltage, channel length, and oxide thickness. The discrepancies between the classical calculation and quantum calculation were also measured and it has been found to be as high as 19% drive current loss due to the quantum confinement. Our finding which is in good agreement with the published data provides significant insight into the device performance of uniaxial strained AGNRs in nanoelectronic applications.