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Journal of Nanomaterials
Volume 2014 (2014), Article ID 219719, 7 pages
http://dx.doi.org/10.1155/2014/219719
Research Article

Unified Drain Current Model of Armchair Graphene Nanoribbons with Uniaxial Strain and Quantum Effect

1Department of Electrical & Electronic, Southern University College, 81300 Skudai, Johor, Malaysia
2Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81300 Skudai, Johor, Malaysia

Received 8 January 2014; Revised 31 March 2014; Accepted 31 March 2014; Published 23 April 2014

Academic Editor: Yingkui Yang

Copyright © 2014 EngSiew Kang and Razali Ismail. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. Q. Xu, X. Duan, H. Liu, Z. Han, and T. Ye, “Low-cost and highly manufacturable strained-Si channel technique for strong hole mobility enhancement on 35-nm gate length pMOSFETs,” IEEE Transactions on Electron Devices, vol. 54, no. 6, pp. 1394–1401, 2007. View at Publisher · View at Google Scholar · View at Scopus
  2. A. H. C. Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, “The electronic properties of graphene,” Reviews of Modern Physics, vol. 81, no. 1, pp. 109–162, 2009. View at Publisher · View at Google Scholar · View at Scopus
  3. J.-H. Wong, B.-R. Wu, and M.-F. Lin, “Strain effect on the electronic properties of single layer and bilayer graphene,” The Journal of Physical Chemistry C, vol. 116, no. 14, pp. 8271–8277, 2012. View at Publisher · View at Google Scholar · View at Scopus
  4. M. F. Craciun, S. Russo, M. Yamamoto, and S. Tarucha, “Tuneable electronic properties in graphene,” Nano Today, vol. 6, no. 1, pp. 42–60, 2011. View at Publisher · View at Google Scholar · View at Scopus
  5. H. Behera and G. Mukhopadhyay, “Strain-tunable band gap in graphene/h-BN hetero-bilayer,” Journal of Physics and Chemistry of Solids, vol. 73, no. 7, pp. 818–821, 2012. View at Publisher · View at Google Scholar · View at Scopus
  6. D. V. Kosynkin, A. L. Higginbotham, A. Sinitskii et al., “Longitudinal unzipping of carbon nanotubes to form graphene nanoribbons,” Nature, vol. 458, no. 7240, pp. 872–876, 2009. View at Publisher · View at Google Scholar · View at Scopus
  7. F. Guinea, “Strain engineering in graphene,” Solid State Communications, vol. 152, no. 15, pp. 1437–1441, 2012. View at Publisher · View at Google Scholar
  8. N. Wei, L. Xu, H.-Q. Wang, and J.-C. Zheng, “Strain engineering of thermal conductivity in graphene sheets and nanoribbons: a demonstration of magic flexibility,” Nanotechnology, vol. 22, no. 10, Article ID 105705, 2011. View at Publisher · View at Google Scholar · View at Scopus
  9. N. Rosenkranz, M. Mohr, and C. Thomsen, “Uniaxial strain in graphene and armchair graphene nanoribbons: an ab initio study,” Annalen der Physik, vol. 523, no. 1-2, pp. 137–144, 2011. View at Publisher · View at Google Scholar · View at Scopus
  10. Y. Li, X. Jiang, Z. Liu, and Z. Liu, “Strain effects in graphene and graphene nanoribbons: the underlying mechanism,” Nano Research, vol. 3, no. 8, pp. 545–556, 2010. View at Publisher · View at Google Scholar · View at Scopus
  11. K. Khaliji, M. Noei, S. M. Tabatabaei, M. Pourfath, M. Fathipour, and Y. Abdi, “Tunable bandgap in bilayer armchair graphene nanoribbons: concurrent influence of electric field and uniaxial strain,” IEEE Transactions on Electron Devices, vol. 60, no. 8, pp. 2464–2470, 2013. View at Publisher · View at Google Scholar
  12. J. Xia, F. Chen, J. Li, and N. Tao, “Measurement of the quantum capacitance of graphene,” Nature Nanotechnology, vol. 4, no. 8, pp. 505–509, 2009. View at Publisher · View at Google Scholar · View at Scopus
  13. G. Kliros, “Effect of uniaxial strain on the current-voltage characteristics of graphene nanoribbon field-effect transistors,” in Proceedings of the International Semiconductor Conference (CAS '13), vol. 2, pp. 27–30, Sinaia, Romania, 2013.
  14. M. Han, Y. Zhang, and H.-B. Zheng, “Effect of uniaxial strain on band gap of armchair-edge graphene nanoribbons,” Chinese Physics Letters, vol. 27, no. 3, Article ID 037302, 2010. View at Publisher · View at Google Scholar · View at Scopus
  15. M. T. Ahmadi, Z. Johari, D. C. Y. Chek, N. A. Amin, and R. Ismail, “Modelling of graphene nanoribbon Fermi energy,” Journal of Nanomaterials, vol. 2010, Article ID 909347, 6 pages, 2010. View at Publisher · View at Google Scholar · View at Scopus
  16. D. Gunlycke and C. T. White, “Tight-binding energy dispersions of armchair-edge graphene nanostrips,” Physical Review B, vol. 77, no. 11, Article ID 115116, 2008. View at Publisher · View at Google Scholar · View at Scopus
  17. J. Guo, Y. Yoon, and Y. Ouyang, “Gate electrostatics and quantum capacitance of graphene nanoribbons,” Nano Letters, vol. 7, no. 7, pp. 1935–1940, 2007. View at Publisher · View at Google Scholar · View at Scopus
  18. M. L. P. Tan, V. K. Arora, I. Saad, M. T. Ahmadi, and R. Ismail, “The drain velocity overshoot in an 80 nm metal-oxide-semiconductor field-effect transistor,” Journal of Applied Physics, vol. 105, no. 7, Article ID 074503, 2009. View at Publisher · View at Google Scholar · View at Scopus
  19. X. Zhou and K. Y. Lim, “Unified MOSFET compact I-V model formulation through physics-based effect transformation,” IEEE Transactions on Electron Devices, vol. 48, no. 5, pp. 887–896, 2001. View at Publisher · View at Google Scholar · View at Scopus
  20. J. Kong and A. Javey, Carbon Nanotube Electronics, Springer, Boston, Mass, USA, 2009.
  21. M. T. Ahmadi, M. L. P. Tan, R. Ismail, and V. K. Arora, “The high-field drift velocity in degenerately-doped silicon nanowires,” International Journal of Nanotechnology, vol. 6, no. 7-8, pp. 601–617, 2009. View at Publisher · View at Google Scholar · View at Scopus
  22. G. S. Kliros, “Modeling of carrier density and quantum capacitance in graphene nanoribbon FETs,” in Proceedings of the International Conference on Microelectronics (ICM '10), pp. 236–239, Cairo, Egypt, December 2010. View at Publisher · View at Google Scholar · View at Scopus
  23. K. Alam, “Uniaxial strain effects on the performance of a ballistic top gate graphene nanoribbon on insulator transistor,” IEEE Transactions on Nanotechnology, vol. 8, no. 4, pp. 528–534, 2009. View at Publisher · View at Google Scholar · View at Scopus
  24. G. S. Jayadeva and A. DasGupta, “Compact model of short-channel MOSFETs considering quantum mechanical effects,” Solid-State Electronics, vol. 53, no. 6, pp. 649–657, 2009. View at Publisher · View at Google Scholar · View at Scopus
  25. M. A. Karim and A. Haque, “A physically based accurate model for quantum mechanical correction to the surface potential of nanoscale MOSFETs,” IEEE Transactions on Electron Devices, vol. 57, no. 2, pp. 496–502, 2010. View at Publisher · View at Google Scholar · View at Scopus