Improvement of Porous GaAs (100) Structure through Electrochemical Etching Based on DMF Solution

Figure 6

Surface morphology of porous GaAs with variation of current density of (a) 25 mA/cm² (sample C), (b) 250 mA/cm² (sample E), (c) 350 mA/cm² (sample G), and (d) 250 mA/cm² with improvement in current conductivity (sample H), at etching time, 𝑡=10 min.

(a)

(b)

(c)

(d)