Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

Table 1

The crystalline size and crystallinity of the poly-Si thin films using AIC with the capping layer for different annealing time.

	Time (min)
	15	30	45	60
Crystallinity size (𝐷, nm)	13.1	17.8	19.8	20.8
Crystallinity (𝑋𝑐, %)	72	74	74	73