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Journal of Nanomaterials
Volume 2014 (2014), Article ID 347858, 5 pages
http://dx.doi.org/10.1155/2014/347858
Research Article

Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

Department of Electronic Engineering, National United University, Miaoli 36003, Taiwan

Received 18 January 2014; Revised 16 June 2014; Accepted 20 June 2014; Published 6 July 2014

Academic Editor: Kaushal Kumar

Copyright © 2014 Yu-Hsien Lin and Jay-Chi Chou. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Yu-Hsien Lin and Jay-Chi Chou, “Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material,” Journal of Nanomaterials, vol. 2014, Article ID 347858, 5 pages, 2014. doi:10.1155/2014/347858