Temperature Effects on a-IGZO Thin Film Transistors Using HfO<sub>2</sub> Gate Dielectric Material

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</svg> transfer characteristics of the a-IGZO TFTs with <svg height="16.3125" id="M57" style="vertical-align:-3.13504pt" version="1.1" viewbox="0 0 36.9375 16.3125" width="36.9375" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> gate dielectric with precursors of <svg height="15.5125" id="M58" style="vertical-align:-3.13504pt" version="1.1" viewbox="0 0 19.1625 15.5125" width="19.1625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> (6, 25, and 50 sccm) through RTA treatment at room temperature.</table>

Journal of Nanomaterials

fig3

Figure 3

Figure 3: Temperature Effects on a-IGZO Thin Film Transistors Using HfO<sub>2</sub> Gate Dielectric Material 

Journal of Nanomaterials

Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

Figure 3

Temperature Effects on a-IGZO Thin Film Transistors Using HfO₂ Gate Dielectric Material