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Journal of Nanomaterials
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Journal of Nanomaterials
/
2014
/
Article
/
Tab 1
/
Research Article
Temperature Effects on a-IGZO Thin Film Transistors Using HfO
2
Gate Dielectric Material
Table 1
A summary table (
/
ratio,
,
, and SS) of the a-IGZO TFTs with HfO
2
gate dielectric.
(
m)
(volts)
SS
(V/dec.)
(cm
2
/V-s)
/
1000/200
1.15
0.137
38.29
2.9 × 10
6