Temperature Effects on a-IGZO Thin Film Transistors Using HfO₂ Gate Dielectric Material

Table 1

A summary table (𝐼_ON/𝐼_OFF ratio, 𝑉_𝑡, 𝐼_OFF, and SS) of the a-IGZO TFTs with HfO₂ gate dielectric.

𝑊/𝐿 (𝜇m)	𝑉th; (volts)	SS; (V/dec.)	𝜇; (cm^2/V-s)	𝐼ON/𝐼OFF
1000/200	1.15	0.137	38.29	2.9 × 10^6