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Journal of Nanomaterials
Volume 2014 (2014), Article ID 409482, 17 pages
Review Article

Emission Mechanisms of Si Nanocrystals and Defects in SiO2 Materials

1Instituto Superior Politécnico de Tecnologia e Ciências (ISPTEC), Avenida Luanda Sul, Rua Lateral Via S10, Talatona, Belas, Luanda, Angola
2Department of Electronics, INAOE, 72840 Puebla, PUE, Mexico
3Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, 66600 Apodaca, NL, Mexico

Received 24 March 2014; Accepted 22 June 2014; Published 26 August 2014

Academic Editor: Anukorn Phuruangrat

Copyright © 2014 José Antonio Rodríguez et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Motivated by the necessity to have all silicon optoelectronic circuits, researchers around the world are working with light emitting silicon materials. Such materials are silicon dielectric compounds with silicon content altered, such as silicon oxide or nitride, enriched in different ways with Silicon. Silicon Rich Oxide or silicon dioxide enriched with silicon, and silicon rich nitride are without a doubt the most promising materials to reach this goal. Even though they are subjected to countless studies, the light emission phenomenon has not been completely clarified. So, a review of different proposals presented to understand the light emission phenomenon including emissions related to nanocrystals and to point defects in SiO2 is presented.