Emission Mechanisms of Si Nanocrystals and Defects in SiO₂ Materials

Figure 19

PL intensity from SRO films super enriched with silicon implantation [58]. R _o = 20 and 30 correspond to a silicon excess of around 5 to 7%, denoted by squares and circles, respectively. The PL intensity increased after thermal annealing at 1100°C during 180 min, as shown in the inset.