Emission Mechanisms of Si Nanocrystals and Defects in SiO2 Materials
Figure 8
(Figure 2 from [2]). Room temperature PL spectrum of a set of thermally oxidized p-Si samples (rapid thermal oxidation, 30 s). H25 is the as-prepared sample. The others have been treated at the temperature indicated. The diameter of the Sinc decreases when the oxidation temperature is increased.
