Emission Mechanisms of Si Nanocrystals and Defects in SiO₂ Materials

Figure 9

(Figure 3 from [2]). PL spectra for Si⁺ implanted SiO₂, annealed at high temperature in forming gas, for increasing annealing time (a) and isochronal (15 min) dry oxidation of the samples annealed at 1050°C in forming gas for increasing oxidation temperature (b).

(a)

(b)