Development and Application of Surface Plasmon Polaritons on Optical Amplification
Figure 11
(a) Schematic showing the device layer structure. (b) Spectra and near field patterns showing lasing in devices. Above threshold emission spectrum for 3-micron-long device with semiconductor core width of nm (±20 nm), with pump current of 180 μA at 78 K. Inset: emission spectra, for 20 (green), 40 (blue), and 60 (red) μA, all at 78 K.
