Journals
Publish with us
Publishing partnerships
About us
Blog
Journal of Nanomaterials
Journal overview
For authors
For reviewers
For editors
Table of Contents
Special Issues
Journal of Nanomaterials
/
2014
/
Article
/
Tab 1
/
Research Article
AlGaN/GaN High Electron Mobility Transistors with Multi-
/GaN Buffer
Table 1
The schematic device structures of samples A and B.
Sample A
Sample B
20 nm
-
N (1 × 10
17
cm
−3
)
20 nm
-
N (1 × 10
17
cm
−3
)
2.2
m un-GaN
2.2
m un-GaN
LT-GaN buffer
multi-
/GaN buffer
Sapphire
Sapphire