Design and Fabrication of Nanoscale IDTs Using Electron Beam Technology for High-Frequency SAW Devices

Table 1

Deposition parameters of AlN thin films.

Target	Al (99.995%)
Substrate-to-target distance (mm)	50
Base pressure (Torr)	5×10^−7
Substrate temperature (°C)	300
RF power (W)	200, 250, 300
Sputtering pressure (mTorr)	5, 10, 15
N2/(N2 + Ar)	60%
Time durations (hours)	3
Deposition rate	667 nm/hour