III–V Nanowires: Synthesis, Property Manipulations, and Device Applications
Figure 6
Electrical characterization of In0.7Ga0.3As NW FETs with different NW dimensions. (a) Transfer characteristics of three back-gated In0.7Ga0.3As NW FETs with different NW diameters (d = 19.3, 32.4, and 41.9 nm, after the native oxide deduction) for V. The inset shows the transistor schematic with Ni S/D metal contacts. (b)–(d) Output performance of the three corresponding devices as shown in (a). (e) Field-effect electron mobility assessment for the same set of NW FETs under V as presented in (a). The black dotted line is the experiment data while the solid red line is the smoothed data curve. (f) Peak field-effect mobility as a function of NW diameter for ~100 NWs with the diameters ranging from 14 to 54 nm. Reproduced from [37] with permission from The American Institute of Physics.
