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Journal of Nanomaterials
Volume 2014 (2014), Article ID 703463, 5 pages
Research Article

Resistive Switching Characteristics of a SiOx Layer with CF4 Plasma Treatment

1Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan
2Department of Physics, National Kaohsiung Normal University, Kaohsiung 824, Taiwan

Received 9 December 2013; Revised 8 February 2014; Accepted 8 February 2014; Published 11 March 2014

Academic Editor: Sheng-Po Chang

Copyright © 2014 Chih-Yi Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Chih-Yi Liu, Yueh-Ying Tsai, Wen-Tsung Fang, and Hung-Yu Wang, “Resistive Switching Characteristics of a SiOx Layer with CF4 Plasma Treatment,” Journal of Nanomaterials, vol. 2014, Article ID 703463, 5 pages, 2014. doi:10.1155/2014/703463