Resistive Switching Characteristics of a SiO<sub><i>x</i></sub> Layer with CF<sub><b>4</b></sub> Plasma Treatment

<table>(a) The operating voltage of the control and CF<sub>4</sub>-treated samples and (b) the device resistances of the control and CF<sub>4</sub>-treated samples.</table>

Journal of Nanomaterials

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Figure 3

Figure 3: Resistive Switching Characteristics of a SiO<sub><i>x</i></sub> Layer with CF<sub><b>4</b></sub> Plasma Treatment 

Journal of Nanomaterials

Resistive Switching Characteristics of a SiOx Layer with CF4 Plasma Treatment

Figure 3

Resistive Switching Characteristics of a SiO_x Layer with CF₄ Plasma Treatment