Resistive Switching Characteristics of a SiO<sub><i>x</i></sub> Layer with CF<sub><b>4</b></sub> Plasma Treatment

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="703463.fig.004a" src="https://static.hindawi.com/articles/jnm/volume-2014/703463/figures/703463.fig.004a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b>Control sample</td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="703463.fig.004b" src="https://static.hindawi.com/articles/jnm/volume-2014/703463/figures/703463.fig.004b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b><svg height="15.5125" id="M32" style="vertical-align:-3.276pt" version="1.1" viewbox="0 0 26.75 15.5125" width="26.75" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg>-treated sample</td></tr></table></td></tr></table>

<table>The endurance characteristics of the control and CF<sub>4</sub>-treated samples.</table>

Journal of Nanomaterials

fig4

Figure 4

Figure 4: Resistive Switching Characteristics of a SiO<sub><i>x</i></sub> Layer with CF<sub><b>4</b></sub> Plasma Treatment 

Journal of Nanomaterials

Resistive Switching Characteristics of a SiOx Layer with CF4 Plasma Treatment

Figure 4

Resistive Switching Characteristics of a SiO_x Layer with CF₄ Plasma Treatment