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Journal of Nanomaterials
Volume 2014, Article ID 703463, 5 pages
http://dx.doi.org/10.1155/2014/703463
Research Article

Resistive Switching Characteristics of a SiOx Layer with CF4 Plasma Treatment

1Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan
2Department of Physics, National Kaohsiung Normal University, Kaohsiung 824, Taiwan

Received 9 December 2013; Revised 8 February 2014; Accepted 8 February 2014; Published 11 March 2014

Academic Editor: Sheng-Po Chang

Copyright © 2014 Chih-Yi Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. A. Beck, J. G. Bednorz, C. Gerber, C. Rossel, and D. Widmer, “Reproducible switching effect in thin oxide films for memory applications,” Applied Physics Letters, vol. 77, no. 1, pp. 139–141, 2000. View at Google Scholar · View at Scopus
  2. A. Sawa, “Resistive switching in transition metal oxides,” Materials Today, vol. 11, no. 6, pp. 28–36, 2008. View at Publisher · View at Google Scholar · View at Scopus
  3. C.-H. Lai and T.-Y. Tseng, “Preparation and properties of perovskite thin films for resistive nonvolatile memory applications,” Ferroelectrics, vol. 357, no. 1, pp. 17–27, 2007. View at Publisher · View at Google Scholar · View at Scopus
  4. L. Goux, K. Opsomer, R. Degraeve et al., “Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells,” Applied Physics Letters, vol. 99, no. 5, Article ID 053502, 2011. View at Publisher · View at Google Scholar · View at Scopus
  5. P. Zhou, M. Yin, H. J. Wan, H. B. Lu, T. A. Tang, and Y. Y. Lin, “Role of TaON interface for CuxO resistive switching memory based on a combined model,” Applied Physics Letters, vol. 94, no. 5, Article ID 053510, 2009. View at Publisher · View at Google Scholar · View at Scopus
  6. C. H. Lai, C. H. Chen, and T. Y. Tseng, “Resistive switching behavior of sol-gel deposited TiO2 thin films under different heating ambience,” Surface and Coatings Technology, vol. 231, pp. 399–402, 2013. View at Google Scholar
  7. C. Cagli, F. Nardi, and D. Ielmini, “Modeling of set/reset operations in NiO-based resistive-switching memory devices,” IEEE Transactions on Electron Devices, vol. 56, no. 8, pp. 1712–1720, 2009. View at Publisher · View at Google Scholar · View at Scopus
  8. C.-Y. Liu, Y.-H. Huang, J.-Y. Ho, and C.-C. Huang, “Retention mechanism of Cu-doped SiO2-based resistive memory,” Journal of Physics D, vol. 44, no. 20, Article ID 205103, 2011. View at Publisher · View at Google Scholar · View at Scopus
  9. I. Valov, R. Waser, J. R. Jameson, and M. N. Kozicki, “Electrochemical metallization memories: fundamentals, applications, prospects,” Nanotechnology, vol. 22, no. 25, Article ID 254003, 2011. View at Publisher · View at Google Scholar · View at Scopus
  10. S. Yu and H.-S. P. Wong, “Modeling the switching dynamics of Programmable-Metallization-Cell (PMC) memory and its application as synapse device for a neuromorphic computation system,” in Proceedings of the IEEE International Electron Devices Meeting (IEDM '10), pp. 520–523, December 2010. View at Publisher · View at Google Scholar · View at Scopus
  11. R. Waser, R. Dittmann, C. Staikov, and K. Szot, “Redox-based resistive switching memories nanoionic mechanisms, prospects, and challenges,” Advanced Materials, vol. 21, no. 25-26, pp. 2632–2663, 2009. View at Publisher · View at Google Scholar · View at Scopus
  12. P. K. Yang, W. Y. Chang, P. Y. Teng, and S. F. Jeng, “Fully transparent resistive memory employing graphene electrodes for eliminating undesired surface effects,” Proceedings of the IEEE, vol. 101, no. 7, pp. 1732–1739, 2013. View at Publisher · View at Google Scholar
  13. J. J. Ke, Z. J. Liu, C. F. Kang, and S. J. Lin, “Surface effect on resistive switching behaviors of ZnO,” Apply Physics Letters, vol. 99, Article ID 192106, 3 pages, 2011. View at Google Scholar
  14. T. H. Huang, P. K. Yang, W. Y. Chang et al., “Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory,” Journal of Materials Chemistry C, vol. 1, no. 45, pp. 7593–7597, 2013. View at Publisher · View at Google Scholar
  15. Y.-T. Tsai, T.-C. Chang, C.-C. Lin et al., “Influence of nanocrystals on resistive switching characteristic in binary metal oxides memory devices,” Electrochemical and Solid-State Letters, vol. 14, no. 3, pp. H135–H138, 2011. View at Publisher · View at Google Scholar · View at Scopus
  16. Q.-Q. Sun, J.-J. Gu, L. Chen et al., “Controllable filament with electric field engineering for resistive switching uniformity,” IEEE Electron Device Letters, vol. 32, no. 9, pp. 1167–1169, 2011. View at Publisher · View at Google Scholar · View at Scopus
  17. R. Jung, M.-J. Lee, S. Seo et al., “Decrease in switching voltage fluctuation of PtNi Ox Pt structure by process control,” Applied Physics Letters, vol. 91, no. 2, Article ID 022112, 2007. View at Publisher · View at Google Scholar · View at Scopus
  18. C. Vallée, P. Gonon, C. Mannequin et al., “Plasma treatment of HfO2-based metalinsulatormetal resistive memories,” Journal of Vacuum Science and Technology A, vol. 29, no. 4, Article ID 041512, 2011. View at Publisher · View at Google Scholar · View at Scopus
  19. J. C. Wang, Y. R. Ye, C. S. Lai et al., “Characterization of gadolinium oxide thin films with CF4 plasma treatment for resistive switching memory applications,” Applied Surface Science, vol. 276, pp. 497–501, 2013. View at Publisher · View at Google Scholar
  20. Y.-H. Kim, M. S. Hwang, H. J. Kim, J. Y. Kim, and Y. Lee, “Infrared spectroscopy study of low-dielectric-constant fluorine-incorporated and carbon-incorporated silicon oxide films,” Journal of Applied Physics, vol. 90, no. 7, pp. 3367–3370, 2001. View at Publisher · View at Google Scholar · View at Scopus
  21. C. Y. Liu, Y. R. Shih, and S. J. Huang, “Unipolar resistive switching in a transparent ITO/SiOx/ITO sandwich fabricated at room temperature,” Solid State Communications, vol. 159, pp. 13–17, 2013. View at Publisher · View at Google Scholar
  22. S. M. Sze, Physics of Semiconductor Devices, Wiley, New York, NY, USA, 2nd edition, 1981.
  23. S. Menzel, U. Böttger, and R. Waser, “Simulation of multilevel switching in electrochemical metallization memory cells,” Journal of Applied Physics, vol. 111, no. 1, Article ID 014501, 2012. View at Publisher · View at Google Scholar · View at Scopus
  24. N. Yuan and J. Li, “Improve the charge stability of SiO2 films by plasma treatment and ion implantation,” in 5th International Conference on Thin Film Physics and Applications, vol. 5774 of Proceedings of SPIE, p. 78, December 2004. View at Publisher · View at Google Scholar · View at Scopus