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Journal of Nanomaterials
Volume 2014, Article ID 709018, 7 pages
http://dx.doi.org/10.1155/2014/709018
Research Article

ZnO Thin-Film Transistor Grown by rf Sputtering Using Carbon Dioxide and Substrate Bias Modulation

1Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749, Republic of Korea
2Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8502, Japan
3Samsung Electronics, Giheung, Hwaseong 445-330, Republic of Korea
4Smart Electronics Co., Ltd., Samdong-myeon, Ulsan 689-930, Republic of Korea

Received 16 June 2014; Revised 23 September 2014; Accepted 22 October 2014; Published 11 November 2014

Academic Editor: Songwei Lu

Copyright © 2014 Junghwan Kim et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. M. Ito, M. Kon, C. Miyazaki et al., “Amorphous oxide TFT and their applications in electrophoretic displays,” Physica Status Solidi (A) Applications and Materials Science, vol. 205, no. 8, pp. 1885–1894, 2008. View at Publisher · View at Google Scholar · View at Scopus
  2. T. Kamiya, K. Nomura, and H. Hosono, “Present status of amorphous InGaZnO thin-film transistors,” Science and Technology of Advanced Materials, vol. 11, no. 4, Article ID 044305, 2010. View at Google Scholar
  3. S. Li, Y. Cai, D. Han et al., “Low-temperature ZnO TFTs fabricated by reactive sputtering of metallic zinc target,” IEEE Transactions on Electron Devices, vol. 59, no. 9, pp. 2555–2558, 2012. View at Publisher · View at Google Scholar · View at Scopus
  4. P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes Jr., “Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering,” Applied Physics Letters, vol. 82, no. 7, pp. 1117–1119, 2003. View at Publisher · View at Google Scholar · View at Scopus
  5. E. Fortunato, P. Barquinha, A. Pimentel et al., “Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature,” Applied Physics Letters, vol. 85, no. 13, pp. 2541–2543, 2004. View at Publisher · View at Google Scholar · View at Scopus
  6. K. Miyamoto, M. Sano, H. Kato, and T. Yao, “Effects of ZnO/MgO double buffer layers on structural quality and electron mobility of ZnO epitaxial films grown on c-plane sapphire,” Japanese Journal of Applied Physics, Part 2: Letters, vol. 41, no. 11A, pp. L1203–L1205, 2002. View at Publisher · View at Google Scholar · View at Scopus
  7. J. Siddiqui, E. Cagin, D. Chen, and J. D. Phillips, “ZnO thin-film transistors with polycrystalline (Ba,Sr) TiO3 gate insulators,” Applied Physics Letters, vol. 88, no. 21, Article ID 212903, 2006. View at Publisher · View at Google Scholar · View at Scopus
  8. J. Jo, H. Choi, J. Yun, H. Kim, O. Seo, and B. Lee, “Improvement of on/off ratio in ZnO thin-film transistor by using growth interruptions during metalorganic chemical vapor deposition,” Thin Solid Films, vol. 517, no. 23, pp. 6337–6340, 2009. View at Publisher · View at Google Scholar · View at Scopus
  9. G. Adamopoulos, A. Bashir, S. Thomas et al., “Spray-deposited Li-doped ZnO transistors with electron mobility exceeding 50 cm2/Vs,” Advanced Materials, vol. 22, no. 42, pp. 4764–4769, 2010. View at Publisher · View at Google Scholar · View at Scopus
  10. H. Yabuta, M. Sano, K. Abe et al., “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering,” Applied Physics Letters, vol. 89, no. 11, Article ID 112123, 2006. View at Publisher · View at Google Scholar · View at Scopus
  11. P. S. Xu, Y. M. Sun, C. S. Shi, F. Q. Xu, and H. B. Pan, “The electronic structure and spectral properties of ZnO and its defects,” Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 199, pp. 286–290, 2003. View at Publisher · View at Google Scholar · View at Scopus
  12. A. F. Kohan, G. Ceder, and D. Morgan, “First-principles study of native point defects in ZnO,” Physical Review B—Condensed Matter and Materials Physics, vol. 61, no. 22, pp. 15019–15027, 2000. View at Google Scholar
  13. X. Li, S. E. Asher, S. Limpijumnong et al., “Unintentional doping and compensation effects of carbon in metal-organic chemical-vapor deposition fabricated ZnO thin films,” Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 24, no. 4, pp. 1213–1217, 2006. View at Publisher · View at Google Scholar · View at Scopus
  14. J. W. Park, D. H. Kim, S.-H. Choi, M. Lee, and D. Lim, “The role of carbon doping in ZnO,” Journal of the Korean Physical Society, vol. 57, no. 6, pp. 1482–1485, 2010. View at Publisher · View at Google Scholar · View at Scopus
  15. P. Erhart, A. Klein, and K. Albe, “First-principles study of the structure and stability of oxygen defects in zinc oxide,” Physical Review B—Condensed Matter and Materials Physics, vol. 72, no. 8, Article ID 085213, 2005. View at Publisher · View at Google Scholar · View at Scopus
  16. E. Rühl and R. Flesch, “Mechanism of anion formation in C 1s  π*-excited carbon dioxide,” Journal of Chemical Physics, vol. 121, no. 11, pp. 5322–5327, 2004. View at Publisher · View at Google Scholar · View at Scopus
  17. J. Jia, Y. Torigoshi, and Y. Shigesato, “In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process,” Applied Physics Letters, vol. 103, no. 1, Article ID 013501, 2013. View at Publisher · View at Google Scholar · View at Scopus
  18. M. C. Chu, J. S. Meena, P. T. Liu et al., “Oxygen plasma functioning of charge carrier density in zinc oxide thin-film transistors,” Applied Physics Express, vol. 6, no. 7, Article ID 076501, 2013. View at Publisher · View at Google Scholar · View at Scopus
  19. Y. Kawamura, N. Hattori, N. Miyatake, and Y. Uraoka, “Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant,” Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 31, no. 1, Article ID 01A142, 2013. View at Publisher · View at Google Scholar · View at Scopus
  20. K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing,” Applied Physics Letters, vol. 93, no. 19, Article ID 192107, 2008. View at Publisher · View at Google Scholar · View at Scopus
  21. F. M. Hossain, J. Nishii, S. Takagi et al., “Modeling and simulation of polycrystalline ZnO thin-film transistors,” Journal of Applied Physics, vol. 94, no. 12, pp. 7768–7777, 2003. View at Publisher · View at Google Scholar · View at Scopus
  22. J. Kim, H. Hiramatsu, H. Hosono, and T. Kamiya, “Fabrication and characterization of ZnS:(Cu,Al) thin film phosphors on glass substrates by pulsed laser deposition,” Thin Solid Films, vol. 559, pp. 18–22, 2014. View at Publisher · View at Google Scholar · View at Scopus
  23. S. I. Park, T. S. Cho, S. J. Doh, J. L. Lee, and J. H. Je, “Structural evolution of ZnO/sapphire(001) heteroepitaxy studied by real time synchrotron x-ray scattering,” Applied Physics Letters, vol. 77, no. 3, pp. 349–351, 2000. View at Publisher · View at Google Scholar · View at Scopus