ZnO Thin-Film Transistor Grown by rf Sputtering Using Carbon Dioxide and Substrate Bias Modulation

Table 1

Growth conditions of samples.

Sample name	Ar flow (sccm)	Oxidizer flow (sccm)	rf power	Substrate bias
A1	10	3 CO2	60 W	0 V/−70 V
A2	12	2 CO2	70 W	0 V/−70 V
B1	8	4 O2	60 W	0 V/−70 V
B2	12	2 O2	70 W	0 V/−70 V
C	12	2 CO2	70 W	−70 V constant