Mixed Phases at the Bottom Interface of Si-Doped AlGaN Epilayers of Optoelectronic Devices

<table>Comparison of XRD <svg height="15" id="M6" style="vertical-align:-2.22495pt" version="1.1" viewbox="0 0 32.212502 15" width="32.212502" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,12.162)"><path d="M475 507q0 -83 -20 -172t-56 -167.5t-93.5 -129t-125.5 -50.5q-157 0 -157 227q0 78 21.5 164t59 161t96.5 123.5t126 48.5q79 0 114 -58t35 -147zM391 522q0 155 -81 155q-62 0 -111 -82.5t-73 -200.5h253q12 81 12 128zM373 346h-255q-12 -91 -12 -150q0 -72 20 -123
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</svg> patterns of sample A and control samples B and C. Cubic Al<sub>0.4</sub>Ga<sub>0.6</sub>N (002) and (103) reflection peaks are clearly observed. Dotted lines are used for visual aid.</table>

Journal of Nanomaterials

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Figure 3

Figure 3: Mixed Phases at the Bottom Interface of Si-Doped AlGaN Epilayers of Optoelectronic Devices 