Journal of Nanomaterials / 2014 / Article / Fig 3

Research Article

Mixed Phases at the Bottom Interface of Si-Doped AlGaN Epilayers of Optoelectronic Devices

Figure 3

Comparison of XRD patterns of sample A and control samples B and C. Cubic Al0.4Ga0.6N (002) and (103) reflection peaks are clearly observed. Dotted lines are used for visual aid.
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