Mixed Phases at the Bottom Interface of Si-Doped AlGaN Epilayers of Optoelectronic Devices

<table>Distribution of cubic Al<sub>0.4</sub>Ga<sub>0.6</sub>N subgrains at the bottom interface of Si-doped epilayers.</table>

Journal of Nanomaterials

Figure 5: Mixed Phases at the Bottom Interface of Si-Doped AlGaN Epilayers of Optoelectronic Devices 