Void Structures in Regularly Patterned ZnO Nanorods Grown with the Hydrothermal Method
Figure 4
(a)–(d) Cross-sectional TEM images of an as-grown Ga-doped ZnO NR and Ga-doped ZnO NRs thermally annealed at 200, 300, and 400°C, respectively, with ambient oxygen for 60 min. The Ga-doped ZnO NRs are grown under the standard condition.
