Void Structures in Regularly Patterned ZnO Nanorods Grown with the Hydrothermal Method

Table 1

Ratio of integrated PL intensity of the ZnO band-edge emission over that of the defect emission with different Ga doping concentrations at different thermal annealing temperatures.

Doping concentration (M)	As-grown	200°C	300°C	400°C	500°C
0.002	0.24	0.43	1.69	0.18	0.08
0.003	0.17	0.53	2.11	0.28	0.09
0.004	0.15	0.55	0.84	0.22	0.01